Issue 8, 2025

Buried and bulk synergistic engineering enables high-performance inverted 2D/3D perovskite solar cells

Abstract

Crystal growth regulation plays a key role in the fabrication of high-quality perovskite films. While surface defects have been extensively studied, the optimization of buried interfaces and bulk properties remains a significant challenge due to their complex influence on film morphology and device performance. Here, a synergistic strategy was developed to improve perovskite film quality by modifying the buried interface with FuMACl and controlling bulk crystallization using (DFP)2PbI4 2D perovskite crystal seeds. The FuMACl layer improves the wettability, alleviates residual stress at the buried interface, and passivates defects. Combined with the (DFP)2PbI4 seeds in bulk, these modifications effectively enhance film quality and increase grain size, leading to a significantly reduced defect density. Compared to the control device with an efficiency of 23.11%, the target device demonstrated a champion efficiency of 26.03% and a notable fill factor of 86.79%, along with improved stability. Moreover, perovskite mini-modules with an aperture area of 10.80 cm2 achieved 22.89% efficiency. These findings highlight the potential of the synergistic effects of buried interfaces and bulk engineering strategies to significantly enhance the performance of PSCs.

Graphical abstract: Buried and bulk synergistic engineering enables high-performance inverted 2D/3D perovskite solar cells

Supplementary files

Article information

Article type
Paper
Submitted
09 Jan 2025
Accepted
04 Mar 2025
First published
05 Mar 2025

Energy Environ. Sci., 2025,18, 3740-3749

Buried and bulk synergistic engineering enables high-performance inverted 2D/3D perovskite solar cells

Z. Song, Y. Zou, Y. Gao, X. Gao, L. Yang, H. Liu, Y. Ma, R. Wang, Z. Hu, Y. Chen, B. Xu and Y. Liu, Energy Environ. Sci., 2025, 18, 3740 DOI: 10.1039/D5EE00156K

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements