Insulator–metal transition induced by band-filling modulation in molecular Mott insulators

Abstract

Metallic x-Li(Pc)Brx and x-Li(tbp)Ix were fabricated via halogen doping of the Mott insulators x-Li(Pc) and x-Li(tbp), where Pc and tbp denote the phthalocyaninato and tetrabenzoporphyrinato ligands, respectively. Crystal structure analyses revealed that halogen atoms in x-Li(Pc)Brx and x-Li(tbp)Ix penetrated the channels of the pristine x-Li(Pc) and x-Li(tbp) during the chemical oxidation of the ligands. Raman spectroscopy indicated that bromine and iodine exist as Br3 and I3, whereas iodine in the previously reported x-Li(Pc)I exists as I5. These findings suggest that band-filling modulation by halogen doping depends on both the halogen species and the π-ligand. Although x-Li(Pc)Brx was unstable during heat treatment, the dedoping process was successfully achieved using a reductant, demonstrating that the electronic states between the Mott insulating and metallic states can be chemically controlled.

Graphical abstract: Insulator–metal transition induced by band-filling modulation in molecular Mott insulators

Supplementary files

Article information

Article type
Paper
Submitted
04 Mar 2025
Accepted
22 Apr 2025
First published
29 Apr 2025

Dalton Trans., 2025, Advance Article

Insulator–metal transition induced by band-filling modulation in molecular Mott insulators

M. Kaneko, M. Masuda, R. Teruya, T. Sato, T. Akutagawa and M. Matsuda, Dalton Trans., 2025, Advance Article , DOI: 10.1039/D5DT00525F

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