Impact of –OH surface defects on the electronic and structural properties of nickel oxide thin films†
Abstract
Nickel oxide-based thin films and nanomaterials are a current focus of intense research efforts due to the broad range of end uses in a variety of applications. While the chemico-physical properties of bulk NiO crystals, characterized by a wide band gap (4.0–4.3 eV), antiferromagnetic ordering and p-type character, have been extensively studied, for NiO films/nanomaterials the microscopic-level relationships between the surface defect structure and electronic properties are far from being completely elucidated. In the present work, we show that, by using density functional theory with the Hubbard correction (DFT+U), –OH surface defects, almost ubiquitous on oxide surfaces, can directly influence the electronic structure of NiO(100) model slabs. Depending on the exact defect chemical structure and surface defect density, the energy gap of the –OH bearing NiO(100) system can be engineered, and its behaviour can be modulated from p-type to n-type. The insights provided herein may be of importance for the modulation of NiO nanosystem properties as a function of specific applications, an important issue for their eventual real-world utilization.
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