Issue 9, 2025

DBD plasma combined with Ni–Mn/SiO2 catalysts modified by myristic acid for methane oxidation in presence of water vapor

Abstract

Plasma catalysis is recognized as a promising technology for the elimination of methane. However, co-existence of moisture in flue gas reduces significantly the adsorption capacity of catalysts toward CH4. Herein, Ni–Mn/SiO2 catalysts were tuned by controlling the Ni/Mn molar ratio and subjected to hydrophobic treatment using myristic acid to promote methane oxidation under humid conditions. The plasma–catalytic system demonstrated a substantial improvement in CH4 conversion and CO2 selectivity compared to the plasma-only system owing to the synergistic effects of plasma and catalysis on methane degradation. The increase in the Mn/Ni molar ratio promotes the formation of Mn4+ on the catalyst surface and increases the specific surface area, facilitating the migration and adsorption of reactive oxygen species, which further improves the catalytic activity of methane oxidation reaction. In the presence of 5% water vapor, Ni–Mn(1 : 1)/SiO2–MA exhibited the highest CH4 conversion of 93.5% at 40 W. Due to the introduction of myristic acid with non-polar alkyl groups, a highly hydrophobic surface was obtained on modified catalysts, preventing the coverage of the active sites and promoting CH4 adsorption. This study provides a new and viable solution to improve the performance of catalysts in methane oxidation under high-humidity conditions.

Graphical abstract: DBD plasma combined with Ni–Mn/SiO2 catalysts modified by myristic acid for methane oxidation in presence of water vapor

Article information

Article type
Paper
Submitted
11 Sep 2024
Accepted
25 Mar 2025
First published
26 Mar 2025

Catal. Sci. Technol., 2025,15, 2794-2808

DBD plasma combined with Ni–Mn/SiO2 catalysts modified by myristic acid for methane oxidation in presence of water vapor

C. Hu, M. Li, R. Chen, Y. Yu, C. Ye, Y. Xu, Z. Zhang and H. Zhang, Catal. Sci. Technol., 2025, 15, 2794 DOI: 10.1039/D4CY01093K

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