Issue 45, 2025

Band alignment engineering and performance prediction of Cu2ZnSnS4/Ag2ZnSnS4-based solar cells using first-principles calculations and SCAPS-1D device simulations

Abstract

Cu2ZnSnS4 (CZTS) is recognized as a highly promising material for the absorption layer in solar cells, owing to its non-toxic nature and the abundance of its constituent elements. This study examines the use of CZTS and Ag2ZnSnS4 (AZTS), which is formed through the substitution of homologous elements, as absorption layer materials, while CdSe and ZnSe are utilized as buffer layers of solar cells. Utilizing density functional theory, the electronic properties of the investigated materials are computed, and surface models are constructed based on the semiconductor-exposed terminations to predict variations in electron affinity (χ). A comprehensive solar cell architecture incorporating multiple heterojunctions is also proposed, the one-dimensional solar cell capacitance simulator (SCAPS-1D) software is employed to optimize key parameters for each solar cell configuration, including the χ of the back surface field (BSF) layer and the buffer layer, the absorption layer thickness, as well as interface and bulk defect densities (IF Nt and bulk Nt), with the aim of maximizing efficiency. Finally, a novel device structure (ZnO/CdSe/AZTS/CZTSe/Mo) is introduced, wherein CZTSe functions as the BSF layer positioned between the absorption layer and the back contact electrode. We optimize the band alignment by modifying the χ parameter, enhance the photon absorption efficiency through variation of the absorption layer thickness, and systematically quantify the impacts of both IF Nt and bulk Nt on the performance of the solar cell. The findings reveal that optimal band alignment is achieved when the χ values of the BSF and buffer layers are 4.2 eV and 4.3 eV, the absorption layer thickness is 1300 nm, the bulk Nt and IF Nt are maintained at 1012 cm−3 and 1013 cm−2, respectively. Under these conditions, the PCE reached 23.60%. This work provides valuable insights for the advancement of high-efficiency thin-film solar cells.

Graphical abstract: Band alignment engineering and performance prediction of Cu2ZnSnS4/Ag2ZnSnS4-based solar cells using first-principles calculations and SCAPS-1D device simulations

Supplementary files

Article information

Article type
Paper
Submitted
18 Oct 2025
Accepted
31 Oct 2025
First published
31 Oct 2025

Phys. Chem. Chem. Phys., 2025,27, 24477-24491

Band alignment engineering and performance prediction of Cu2ZnSnS4/Ag2ZnSnS4-based solar cells using first-principles calculations and SCAPS-1D device simulations

L. Sun, Y. Xing, Y. Xue and B. Zhou, Phys. Chem. Chem. Phys., 2025, 27, 24477 DOI: 10.1039/D5CP04011F

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