Issue 42, 2025

A study of the electronic structure and mechanical stability of three TiO2/CeO2 interfaces for high-quality core–shell abrasives for efficient polishing

Abstract

Due to the problems of the easy agglomeration and high polishing defect rates of pure CeO2 particles, this study constructed a core–shell structured TiO2/CeO2 composite abrasive with the aim of achieving high-quality and efficient polishing. The atomic structure, electronic structure, and mechanical properties of a-TiO2(001)/CeO2(001), a-TiO2(101)/CeO2(111) and r-TiO2(110)/CeO2(111) interfaces and their interfaces containing O vacancies were studied using first principles calculations. The results indicated that the structural stability of the three TiO2/CeO2 interfaces was determined by the number and length of the Ti–O and Ce–O covalent bonds generated in the interface region. The value of adhesion work for the stable a-TiO2(001)/CeO2(001) interface and the most unstable r-TiO2(110)/CeO2(111) interface were 2.28 and 0.53 J m−2, respectively. Oxygen vacancy defects reduced the work of adhesion and ideal shear strength of the three TiO2/CeO1.94 interfaces. The fracture of Ti–O bonds in the interface region was the reason for the failure of the a-TiO2(001)/CeO2(001) and a-TiO2(101)/CeO1.94(111) interfaces, while the failure of other interfaces was mainly caused by the fracture of Ce–O bonds in the interface region. Under shear strain, the chemical activities of the r-TiO2(110)/CeO2(111) and r-TiO2(110)/CeO1.94(111) interfaces were reduced.

Graphical abstract: A study of the electronic structure and mechanical stability of three TiO2/CeO2 interfaces for high-quality core–shell abrasives for efficient polishing

Article information

Article type
Paper
Submitted
22 Sep 2025
Accepted
30 Sep 2025
First published
01 Oct 2025

Phys. Chem. Chem. Phys., 2025,27, 22768-22775

A study of the electronic structure and mechanical stability of three TiO2/CeO2 interfaces for high-quality core–shell abrasives for efficient polishing

H. L. Jia, J. Zhang, X. Z. Zhang, X. Tan and Y. N. Cao, Phys. Chem. Chem. Phys., 2025, 27, 22768 DOI: 10.1039/D5CP03655K

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