Issue 45, 2025

Bandgap engineering of SrZrS3 chalcogenide perovskite via substitutional doping for photovoltaic applications: a first-principles DFT study

Abstract

Strontium zirconium sulfide (SrZrS3) has garnered significant attention for photovoltaic (PV) applications due to its excellent optoelectronic properties, high chemical and moisture stability, and non-toxicity. However, the bandgaps of both the α- and β-phases lie outside the optimum ranges for both single-junction solar cells (SJSCs) and tandem solar cells (TSCs), thereby limiting their applications in PV technologies. In this study, we employed hybrid density functional theory to engineer the band gaps of α- and β-SrZrS3 through substitutional doping. We considered three dopants (Hf, Sn, and Ti) at the Zr site of SrZrS3 with varying doping concentrations and investigated their effects on the structural, electronic, and optical properties of the materials. We found that Sn and Ti doping effectively lowers the band gaps of both α- and β-SrZrS3, whereas Hf doping increases them. For x values up to 0.25, the band gaps of the α-SrZr1−xSnxS3 and α-SrZr1−xTixS3 are within the optimum range for SJSCs, and those of β-SrZr1−xSnxS3 and β-SrZr1−xTixS3 lie within the optimum range for Si/perovskite as well as perovskite/perovskite TSCs. The three dopants exhibited significant effects on the optical properties of both α- and β-SrZrS3, including the absorption coefficient, energy-loss functions, reflectivity, and refractivity spectra. Thermodynamic stability analysis revealed that for both phases, SrZr1−xHfxS3 can be synthesized via exothermic processes, whereas the formation of SrZr1−xTixS3 and SrZr1−xSnxS3 is endothermic and hence, not thermodynamically favorable. Further analysis showed that SrZr1−xTixS3 in both α- and β-phases are stable under thermodynamic equilibrium conditions, whereas SrZr1−xSnxS3 is prone to dissociation into ternary phases (SrZrS3 and SrSnS3), especially at higher doping concentrations. These results show that Ti doping is effective in tuning the band gaps of α- and β-SrZrS3 toward the optimal values for PV applications.

Graphical abstract: Bandgap engineering of SrZrS3 chalcogenide perovskite via substitutional doping for photovoltaic applications: a first-principles DFT study

Supplementary files

Article information

Article type
Paper
Submitted
24 Jul 2025
Accepted
21 Oct 2025
First published
22 Oct 2025
This article is Open Access
Creative Commons BY-NC license

Phys. Chem. Chem. Phys., 2025,27, 24195-24210

Bandgap engineering of SrZrS3 chalcogenide perovskite via substitutional doping for photovoltaic applications: a first-principles DFT study

H. I. Eya, R. Patterson and N. Y. Dzade, Phys. Chem. Chem. Phys., 2025, 27, 24195 DOI: 10.1039/D5CP02689J

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