Reply to the ‘Comment on “Air-stable double halide perovskite Cs2CuBiBr6: synthesis and memristor application”’ by L. Xiao, J. Guo, G. Tang and Z. Xiao, Phys. Chem. Chem. Phys., 2025, 27, DOI: 10.1039/D5CP00194C

Abstract

This article addresses the comments from Xiao et al. on our work titled “Air-stable double halide perovskite Cs2CuBiBr6: synthesis and memristor application” published in Physical Chemistry Chemical Physics (Phys. Chem. Chem. Phys., 2025, 27, 3150). The authors mentioned some inconsistencies, which have been addressed in this letter. (1) We have successfully synthesized the double halide perovskite Cs2CuBiBr6 more than a hundred times under ambient conditions and continue to explore this material for its properties and further applications. We have presented XRD data and matched the data with simulated peaks. (2) The stoichiometric composition of our material is also presented from the energy dispersive X-ray spectroscopy (EDS), which shows good agreement with the expected value. (3) The bandgap of the materials was measured using scanning tunnelling spectroscopy (STS), which is a very sophisticated technique used to estimate the bandgap of the material. The bandgap was calculated using the HSE06 functional with a HF value of 0.5. (4) We have also studied the thermodynamic stability using density functional theory (DFT).

Graphical abstract: Reply to the ‘Comment on “Air-stable double halide perovskite Cs2CuBiBr6: synthesis and memristor application”’ by L. Xiao, J. Guo, G. Tang and Z. Xiao, Phys. Chem. Chem. Phys., 2025, 27, DOI: 10.1039/D5CP00194C

Associated articles

Transparent peer review

To support increased transparency, we offer authors the option to publish the peer review history alongside their article.

View this article’s peer review history

Article information

Article type
Comment
Submitted
06 Jun 2025
Accepted
11 Sep 2025
First published
31 Oct 2025

Phys. Chem. Chem. Phys., 2025, Advance Article

Reply to the ‘Comment on “Air-stable double halide perovskite Cs2CuBiBr6: synthesis and memristor application”’ by L. Xiao, J. Guo, G. Tang and Z. Xiao, Phys. Chem. Chem. Phys., 2025, 27, DOI: 10.1039/D5CP00194C

A. Betal, A. Chetia, D. Saikia, K. Karmakar and S. Sahu, Phys. Chem. Chem. Phys., 2025, Advance Article , DOI: 10.1039/D5CP02147B

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements