Issue 26, 2025
From the journal:

CrystEngComm

Correction: Synergistic crucible design and thermal-flow management for enhanced 4-inch AlN single crystal PVT growth: a combined numerical and experimental investigation

Wenliang Li, ORCID logo ab   QianLing Liu,ab   Jun Tan,ab   Guangze He,ab   Yingmin Wang,cd   Zhenhua Sun, ORCID logo ab   Baikui Li ORCID logo ab  and  Honglei Wu ORCID logo *ab  

* Corresponding authors

a State Key Laboratory of Radio Frequency Heterogeneous Integration (Shenzhen University), College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
E-mail: hlwu@szu.edu.cn

b Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China

c The 46th Research Institute, China Electronics Technology Group Corporation, Tianjin, China

d Key Laboratory of Advanced Semiconductor Materials of CTEC, Tianjin, China

Abstract

Correction for ‘Synergistic crucible design and thermal-flow management for enhanced 4-inch AlN single crystal PVT growth: a combined numerical and experimental investigation’ by Wenliang Li et al., CrystEngComm, 2025, 27, 3219–3228, https://doi.org/10.1039/D5CE00214A.

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Article information

DOI
https://doi.org/10.1039/D5CE90082D
Article type
Correction
Submitted
30 May 2025
Accepted
30 May 2025
First published
17 Jun 2025
This article is Open Access
Creative Commons BY license

CrystEngComm, 2025,27, 4603-4604

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Correction: Synergistic crucible design and thermal-flow management for enhanced 4-inch AlN single crystal PVT growth: a combined numerical and experimental investigation

W. Li, Q. Liu, J. Tan, G. He, Y. Wang, Z. Sun, B. Li and H. Wu, CrystEngComm, 2025, 27, 4603 DOI: 10.1039/D5CE90082D

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