Issue 47, 2025

The sensitization effects of Ni2+ on Ho3+ 3.9 μm luminescence in PbF2 single crystal

Abstract

To enhance the 3.9 μm emission of Ho:5I55I6 transition, this work proposes for the first time the use of Ni2+ as a sensitizer. Ni2+, Ho3+, and Ni2+/Ho3+ co-doped PbF2 single crystals were grown by the Bridgman method for verification. Spectroscopic characterization confirmed the effective enhancement of Ho3+ emission at 3.9 μm by Ni2+, with the emission cross-section increasing from 0.3 × 10−20 cm2 to 0.51 × 10−20 cm2. Fluorescence lifetime measurements of the lower 5I6 level revealed a Ho3+:5I6 → Ni2+:3T2g(F) energy transfer efficiency of up to 79.7%, significantly surpassing previous Nd3+/Ho3+ co-doped systems. Furthermore, simulation experiments for a 3.9 μm laser based on the Ni2+/Ho3+ co-doped PbF2 crystal were conducted. The simulations further demonstrated the sensitization effect of Ni2+ on Ho3+ 3.9 μm emission, predicting a theoretical output energy value of 2.88 mJ under a 500 mJ pump input. Therefore, the Ni2+/Ho3+:PbF2 single crystal is demonstrated to be a promising gain medium for 3.9 μm solid-state lasers.

Graphical abstract: The sensitization effects of Ni2+ on Ho3+ 3.9 μm luminescence in PbF2 single crystal

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Article information

Article type
Paper
Submitted
16 Sep 2025
Accepted
20 Oct 2025
First published
10 Nov 2025

CrystEngComm, 2025,27, 7689-7696

The sensitization effects of Ni2+ on Ho3+ 3.9 μm luminescence in PbF2 single crystal

J. Tan, Z. Li, P. Zhang and Z. Chen, CrystEngComm, 2025, 27, 7689 DOI: 10.1039/D5CE00900F

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