Quantum-Dot ZnO-CsPbBr3 Interlayer Induced High-Performance ZnO Nanoarrays/CsPbBr3 Photodetector

Abstract

Recent advances in halide perovskite quantum dot (QD) photodetectors based ZnO nanoarrays (ZnO NRs) have been constrained by significant non-radiative recombination losses at quantum dot interfaces. To address this challenge, an innovative device architecture combining with a tailored quantum-dot (Q-D) CsPbBr3-ZnO composite (P-ZnO) interlayer was designed. The vertically oriented ZnO nanoarrays function as high-mobility electron highways, while the optimized P-ZnO interlayer simultaneously enhances photon harvesting and minimizes interfacial recombination losses. The photodetector incorporating the optimized P-ZnO interlayer demonstrates exceptional performance characteristics, achieving a current modulation ratio exceeding 103, a photoresponsivity of 99.73 mA/W, and a specific detectivity reaches to 6.08×1011 Jones under 450 nm illumination. Also, the P-ZnO nanocomposite layer enables a remarkable suppression of dark current to 0.423 nA while simultaneously boosting photocurrent generation to 1.166 µA. This work establish a facile and scalable fabrication approach for engineering high-efficiency perovskite quantum dot photodetectors.