Numerical investigation on the optimization of growth rate uniformity during 200 mm 4H-SiC growth

Abstract

The physical vapor transport (PVT) method has been widely employed for growing 200 mm 4H-SiC crystals. However, keeping a constant growth rate poses a challenge, as the process occurs within a semi-sealed chamber. In this study, a 2D axisymmetric model is built to explore the methods to improve crystal growth rate uniformity. In order to improve the growth rate decreasing tendency during crystal growth, a novel crystal growth process-powder temperature ramping and a novel furnace structure-addition of a porous graphite ring were implemented. The key growth parameters affected by two proposed methods were analyzed to evaluate grown crystal quality. Both these two methods were proved to be efficient for maintaining a consistent growth rate in the 200 mm SiC crystal growth.