Enriched oxygen vacancies in SnO2−x with narrow bandgap for highly sensitive gas sensing

Pei-Xuan Wu; Bo-Jing Ruan; Ke-Feng Li; Wei-Hua Deng; Yong-Jun Chen; Gang Xu

doi:10.1039/D5CC00960J

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Enriched oxygen vacancies in SnO_2−x with narrow bandgap for highly sensitive gas sensing†

Pei-Xuan Wu,^abc Bo-Jing Ruan,^b Ke-Feng Li,^abc Wei-Hua Deng,*^a Yong-Jun Chen*^b and Gang Xu

Author affiliations

* Corresponding authors

^a College of Chemistry and Materials Science, Fujian Normal University, Fuzhou, Fujian 350007, P. R. China
E-mail: dengweihua@fjnu.edu.cn

^b State Key Laboratory of Structural Chemistry, and Fujian Provincial Key Laboratory of Materials and Techniques toward Hydrogen Energy, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
E-mail: chenyongjun@fjirsm.ac.cn

^c Fujian College, University of Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China

Abstract

High-performance SnO₂-based chemiresistive gas sensors were realized at room temperature by narrowing the bandgap to enhance photogenerated carrier separation. The resulting SnO_2−x exhibited one of the highest responses and lowest LODs among room-temperature and light-activated NO₂ sensors. This work offers a promising strategy for next-generation, low-power gas sensing applications.

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Article information

DOI: https://doi.org/10.1039/D5CC00960J
Article type: Communication
Submitted: 21 Feb 2025
Accepted: 16 Apr 2025
First published: 22 Apr 2025

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Chem. Commun., 2025, Advance Article

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Enriched oxygen vacancies in SnO_2−x with narrow bandgap for highly sensitive gas sensing

P. Wu, B. Ruan, K. Li, W. Deng, Y. Chen and G. Xu, Chem. Commun., 2025, Advance Article , DOI: 10.1039/D5CC00960J

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