Structure-Property Relationships of Group IV (Si-Ge-Sn) Semiconductor Nanocrystals and Nanosheets – Current Understanding and Status

Abstract

Group IV semiconductor nanomaterials, including silicon nanocrystals and more recently nanosheets, are emerging as promising candidates for next-generation optoelectronic devices due to their room-temperature photoluminescence and compatibility with CMOS technologies. However, their intrinsic indirect bandgaps remain a key limitation. In this Feature Article, we highlight our group’s contributions toward structure-property relationships, specifically, in understanding of how the semiconductors' structure, surface chemistry, and chemical composition influence this key limitation, namely photoluminescence, in solution-processable Group IV nanocrystals and nanosheets, with an emphasis on silicon-based materials.