Structure-Property Relationships of Group IV (Si-Ge-Sn) Semiconductor Nanocrystals and Nanosheets – Current Understanding and Status

Abstract

Group IV semiconductor nanomaterials, including silicon nanocrystals and more recently nanosheets, are emerging as promising candidates for next-generation optoelectronic devices due to their room-temperature photoluminescence and compatibility with CMOS technologies. However, their intrinsic indirect bandgaps remain a key limitation. In this Feature Article, we highlight our group’s contributions toward structure-property relationships, specifically, in understanding of how the semiconductors' structure, surface chemistry, and chemical composition influence this key limitation, namely photoluminescence, in solution-processable Group IV nanocrystals and nanosheets, with an emphasis on silicon-based materials.

Article information

Article type
Feature Article
Submitted
03 Oct 2024
Accepted
08 May 2025
First published
09 May 2025
This article is Open Access
Creative Commons BY license

Chem. Commun., 2025, Accepted Manuscript

Structure-Property Relationships of Group IV (Si-Ge-Sn) Semiconductor Nanocrystals and Nanosheets – Current Understanding and Status

J. B. Essner, M. Jabrayilov, A. Tan, A. S. Chaudhari, A. Bera, B. Sevart and M. G. Panthani, Chem. Commun., 2025, Accepted Manuscript , DOI: 10.1039/D4CC05199H

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