Unraveling extraordinary magnetoresistance in GdFe2Al10: a comprehensive exploration of transport and magnetism for technological applications†
Abstract
Recent advances in science and technology highlight the profound impact of magnetoresistance (MR) in various fields, including magnetic data storage and magnetic sensors. Different scientific and engineering approaches are employed to fine-tune these properties in thin films, single crystals, and bulk materials. However, a specific category of materials shows potential for exhibiting giant MR due to their superzone gap. In this article, we delve into the exploration of GdFe2Al10, one of the promising members of a rare-earth based aluminide series with the capacity to manifest giant MR. This material, beyond being a simple antiferromagnet, possesses short-range ferromagnetic interactions and undergoes a paramagnetic to antiferromagnetic and an antiferromagnetic to ferromagnetic transition at low temperatures. Our analysis of electrical magnetotransport uncovers the emergence of a superzone gap due to incongruity in magnetic lattice periodicity with the crystal lattice, leading to a remarkable giant MR effect of 33%. This exploration opens up new possibilities for a series of materials displaying giant MR.