Synthesis, crystal structure and physical properties of ThV2Si2C containing V2C square lattices†
Abstract
We report a new quaternary compound, ThV2Si2C, containing V2C square nets that are sandwiched by Si sheets. The compound crystallizes in a CeCr2Si2C-type structure with cell parameters of a = b = 4.1008 Å and c = 5.4150 Å. Magnetic, electrical transport, and specific heat measurements confirm the Pauli paramagnetic metal behavior in ThV2Si2C, concomitant with low magnetoresistance. At temperatures below 2 K, a possible weak superconducting transition is found. First-principles calculations reveal that V-3d orbitals dominate the electronic states at around the Fermi energy. These states predominantly originate from the dx2−y2, dz2, and dyz orbitals, defining the primarily anisotropic nature of conduction within the V2Si2C block. The differences in the orbital-dependent pairing among charge carriers within isomorphic compounds are discussed.