Issue 10, 2024

Hafnia-based oxide enhanced Ga2O3-based photodetectors via band engineering with ultralarge responsivity

Abstract

Ga2O3 thin films have emerged as an excellent choice as a photoactive layer, with specifically significant prospects for detection within the solar blind range, due to its large direct bandgap, high sensitivity and outstanding stability. Yet, achieving a high responsivity at low supply voltage has proven to be challenging. Here, we fabricated and characterized high-performance vertical-structured β-Ga2O3 photodetectors with epitaxial Hf0.5Zr0.5O2 as an interlayer that demonstrated a very high responsivity of up to 148 A W−1 at a low voltage of 9.8 V. The polar Hf0.5Zr0.5O2 interlayer and low dark current density characteristics enhance the detection performance at low supply voltage and ultralow light intensity. These results provide a path towards high-performance and highly integrated deep-ultraviolet detection devices, beyond conventional ones in terms of application.

Graphical abstract: Hafnia-based oxide enhanced Ga2O3-based photodetectors via band engineering with ultralarge responsivity

Supplementary files

Article information

Article type
Research Article
Submitted
23 Feb 2024
Accepted
18 Mar 2024
First published
19 Mar 2024

Inorg. Chem. Front., 2024,11, 2894-2901

Hafnia-based oxide enhanced Ga2O3-based photodetectors via band engineering with ultralarge responsivity

H. Wu, J. Shen, L. Shu, J. Dai, S. Sha, Z. Liu, W. Tang, Y. Wang, Z. Wu, K. Lin, Q. Li, J. Miao and X. Xing, Inorg. Chem. Front., 2024, 11, 2894 DOI: 10.1039/D4QI00490F

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