Highly Stable Two-dimensional Ruddlesden-Popper Perovskite Based Resistive Switching Memory Devices

Abstract

Resistive switching random-access memory (ReRAM) devices based on organic−inorganic halide perovskites (OIHPs) have emerged as a new class of data storage devices. Recently, two-dimensional (2D) OIHPs have attracted much attention for ReRAM applications because of their structural diversity, and superior stability. Here, RS characteristics of ReRAM devices fabricated utilizing pure 2D Ruddlesden-Popper (RP) perovskite crystals, namely (TEA)₂PbBr₄ and (TEA)₂PbI₄, are reported. The RS memory devices exhibit reliable and reproducible bipolar switching properties with high ON/OFF ratio (~10⁴), excellent data retention over 10⁴ s, and good endurance characteristics of 200 cycles. This study investigates temperature-dependent RS behaviors, elucidating the creation and annihilation of a conducting pathway in presence of an external electric field. Additionally, the RS property of 2D RP perovskite-based memory devices is found to be retained over 45 days at ambient conditions under a relative humidity of 47% ± 4%. Our findings may accelerate the technological deployment of 2D perovskite-based stable RS memory devices for successful logic application.