Issue 5, 2024

Rational ligand design for enhanced carrier mobility in self-powered SWIR photodiodes based on colloidal InSb quantum dots

Abstract

Solution-processed colloidal III–V semiconductor quantum dot photodiodes (QPDs) have potential applications in short-wavelength infrared (SWIR) imaging due to their tunable spectral response range, possible multiple-exciton generation, operation at 0-V bias voltage and low-cost fabrication and are also expected to replace lead- and mercury-based counterparts that are hampered by reliance on restricted elements (RoHS). However, the use of III–V CQDs as photoactive layers in SWIR optoelectronic applications is still a challenge because of underdeveloped ligand engineering for improving the in-plane conductivity of the QD assembled films. Here, we report on ligand engineering of InSb CQDs to enhance the optical response performance of self-powered SWIR QPDs. Specifically, by replacing the conventional ligand (i.e., oleylamine) with sulfide, the interparticle distance between the CQDs was shortened from 5.0 ± 0.5 nm to 1.5 ± 0.5 nm, leading to improved carrier mobility for high photoresponse speed to SWIR light. Furthermore, the use of sulfide ligands resulted in a low dark current density (∼nA cm−2) with an improved EQE of 18.5%, suggesting their potential use in toxic-based infrared image sensors.

Graphical abstract: Rational ligand design for enhanced carrier mobility in self-powered SWIR photodiodes based on colloidal InSb quantum dots

Supplementary files

Article information

Article type
Communication
Submitted
24 Jan 2024
Accepted
11 Mar 2024
First published
19 Mar 2024
This article is Open Access
Creative Commons BY-NC license

Nanoscale Horiz., 2024,9, 817-827

Rational ligand design for enhanced carrier mobility in self-powered SWIR photodiodes based on colloidal InSb quantum dots

S. Chatterjee, K. Nemoto, H. Sun and N. Shirahata, Nanoscale Horiz., 2024, 9, 817 DOI: 10.1039/D4NH00038B

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