Issue 28, 2024

Room-temperature ferromagnetism, half-metallicity and spin transport in monolayer CrSc2Te4-based magnetic tunnel junction devices

Abstract

The discovery of novel two-dimensional (2D) half-metallic materials with a robust ferromagnetic (FM) order and a high Curie temperature (Tc) is attractive for the advancement of next-generation spintronic devices. Here, we propose a monolayer with stable 2D intrinsic FM half-metallicity, i.e., the CrSc2Te4 monolayer, which was constructed by intercalating a monolayer of 1T-CrTe2-type sandwiched between two layers of 2H-ScTe2 monolayers. Our calculations reveal that it exhibits exceptional dynamical, thermal, and mechanical stabilities accompanied by a robust half-metallicity characterized by a wide bandgap of 1.02 eV and FM ordering with a high Tc of 326 K. Notably, these properties remain intact in almost the entire range of the biaxial strain from −5% to 5%. Furthermore, our investigations demonstrate excellent spin transport capabilities, including an outstanding spin-filtering effect, and a remarkably high tunneling magnetoresistance ratio peaking at 6087.07%. The remarkable magnetic features of the 2D CrSc2Te4 monolayer with room temperature FM, intrinsic half-metallicity, and 100% spin-polarization make it a promising candidate for the next-generation high-performance spintronic nanodevices as well as high-density magnetic recording and sensors.

Graphical abstract: Room-temperature ferromagnetism, half-metallicity and spin transport in monolayer CrSc2Te4-based magnetic tunnel junction devices

Supplementary files

Article information

Article type
Paper
Submitted
23 Apr 2024
Accepted
19 Jun 2024
First published
20 Jun 2024

Phys. Chem. Chem. Phys., 2024,26, 19207-19216

Room-temperature ferromagnetism, half-metallicity and spin transport in monolayer CrSc2Te4-based magnetic tunnel junction devices

R. Yue, X. Su, X. Lv, B. Zhang, S. Su, H. Li, S. Guo and J. Gong, Phys. Chem. Chem. Phys., 2024, 26, 19207 DOI: 10.1039/D4CP01660B

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