GeSe/WSe2 mixed dimensional p–n junction photoelectric properties

Abstract

Heterojunctions prepared utilizing diverse 2D materials enhance a variety of optoelectronic devices. Here, we present GeSe/WSe₂ mixed-dimensional p–n heterojunctions, which broaden the possibility of material combination and selection in 2D/layered heterojunction devices, while also providing material parameters to facilitate the development of optoelectronic devices based on 2D/layered semiconductor materials.