Issue 23, 2023

Superior high temperature performance of 8 kV NiO/Ga2O3 vertical heterojunction rectifiers

Abstract

NiO/β-Ga2O3 vertical rectifiers exhibit near-temperature-independent breakdown voltages (VB) of >8 kV to 600 K. For 100 μm diameter devices, the power figure of merit (VB)2/RON, where RON is the on-state resistance, was 9.1 GW cm−2 at 300 K and 3.9 GW cm−2 at 600 K. By sharp contrast, Schottky rectifiers fabricated on the same wafers show VB of ∼1100 V at 300 K, with a negative temperature coefficient of breakdown of 2 V K−1. The corresponding figures of merit for Schottky rectifiers were 0.22 GW cm−2 at 300 K and 0.59 MW cm−2 at 600 K. The on–off ratio remained >1010 up to 600 K for heterojunction rectifiers but was 3 orders of magnitude lower over the entire temperature range for Schottky rectifiers. The power figure of merit is higher by a factor of approximately 6 than the 1-D unipolar limit of SiC. The reverse recovery times were ∼26 ± 2 ns for both types of devices and were independent of temperature. We also fabricated large area, 1 mm2 rectifiers. These exhibited VB of 4 kV at 300 K and 3.6 kV at 600 K. The results show the promise of using this transparent oxide heterojunction for high temperature, high voltage applications.

Graphical abstract: Superior high temperature performance of 8 kV NiO/Ga2O3 vertical heterojunction rectifiers

Article information

Article type
Paper
Submitted
05 Apr 2023
Accepted
14 May 2023
First published
15 May 2023

J. Mater. Chem. C, 2023,11, 7750-7757

Author version available

Superior high temperature performance of 8 kV NiO/Ga2O3 vertical heterojunction rectifiers

J. Li, C. Chiang, X. Xia, H. Wan, F. Ren and S. J. Pearton, J. Mater. Chem. C, 2023, 11, 7750 DOI: 10.1039/D3TC01200J

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