The impact of spatially heterogeneous chemical doping on the electronic properties of CdSe quantum dots: insights from ab initio computation

Abstract

The introduction of copper (Cu) impurity in semiconductor CdSe quantum dots (QDs) gives rise to unique photoluminescence (PL) bands exhibiting distinctive characteristics, like broad line width, significant Stokes shift, and complex temporal decay. The atomistic origins of these spectral features are yet to be understood comprehensively. We employed multiple computational techniques to systematically study the impact of the spatial heterogeneity of Cu atoms on the stability and photophysical properties, including the emission linewidth of doped QDs under ambient conditions. The Cu substitution introduces a spin-polarized intragap state, the energetic position of which is strongly dependent on the dopant location and causes spectral broadening in QD ensembles. Furthermore, the dopant dynamics under ambient conditions are significantly influenced by the specific arrangement of Cu within the QDs. The dynamic electronic structures of surface-doped CdSe illustrate more pronounced perturbations and vary the mid-gap state position more drastically than those of the core-doped QDs. Vibronic coupling broadens the photoluminescence peaks associated with the conduction band-to-defect level transition for individual QDs. These insights into the dynamic structure–photophysical property relationship suggest viable approaches, such as tuning the operational temperature and selective co-doping, to enhance the functional performances of doped CdSe QDs strategically.