Issue 11, 2023
From the journal:

Materials Horizons

Retraction: Progressive p-channel vertical transistors fabricated using electrodeposited copper oxide designed with grain boundary tunability

Sung Hyeon Jung,a   Ji Sook Yang,a   Young Been Kim,a   Nishad G. Deshpande,b   Dong Su Kim,a   Ji Hoon Choi,a   Hee Won Suh,a   Hak Hyeon Leea  and  Hyung Koun Cho*ac  

* Corresponding authors

a School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, Republic of Korea
E-mail: chohk@skku.edu

b Indian Institute of Information Technology Surat, India

c Research Center for Advanced Materials Technology, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, Republic of Korea

Abstract

Retraction of ‘Progressive p-channel vertical transistors fabricated using electrodeposited copper oxide designed with grain boundary tunability’ by Sung Hyeon Jung et al., Mater. Horiz., 2022, 9, 1010–1022, https://doi.org/10.1039/D1MH01568K.

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Article information

DOI
https://doi.org/10.1039/D3MH90059B
Article type
Retraction
Submitted
10 Oct 2023
Accepted
10 Oct 2023
First published
18 Oct 2023
This article is Open Access
Creative Commons BY license

Mater. Horiz., 2023,10, 5313-5313

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Retraction: Progressive p-channel vertical transistors fabricated using electrodeposited copper oxide designed with grain boundary tunability

S. H. Jung, J. S. Yang, Y. B. Kim, N. G. Deshpande, D. S. Kim, J. H. Choi, H. W. Suh, H. H. Lee and H. K. Cho, Mater. Horiz., 2023, 10, 5313 DOI: 10.1039/D3MH90059B

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