Discovery of a metastable van der Waals semiconductor via polymorphic crystallization of an amorphous film

Yuta Saito; Shogo Hatayama; Wen Hsin Chang; Naoya Okada; Toshifumi Irisawa; Fumihiko Uesugi; Masaki Takeguchi; Yuji Sutou; Paul Fons

doi:10.1039/D2MH01449A

Discovery of a metastable van der Waals semiconductor via polymorphic crystallization of an amorphous film†

Yuta Saito,

*^a Shogo Hatayama,

^a Wen Hsin Chang,

^a Naoya Okada,

^a Toshifumi Irisawa,

^a Fumihiko Uesugi,

^b Masaki Takeguchi,

^b Yuji Sutou

^cd and Paul Fons

^ae

Author affiliations

* Corresponding authors

^a Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Japan
E-mail: yuta-saito@aist.go.jp

^b Electron Microscopy Analysis Station, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Japan

^c Department of Materials Science, Graduate School of Engineering, Tohoku University, 6-6-11 Aoba-yama, Sendai, Japan

^d Advanced Institute for Materials Research (AIMR), Tohoku University, 2-1-1 Katahira, Sendai, Japan

^e Department of Electronics and Electrical Engineering, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, Japan

Abstract

Here we report on the growth of thin crystalline films of the metastable phase GeTe₂. Direct observation by transmission electron microscopy revealed a Te–Ge–Te stacking with van der Waals gaps. Moreover, electrical and optical measurements revealed the films exhibted semiconducting properties commensurate with electronics applications. Feasibility studies in which device structures were fabricated demonstrated the potential application of GeTe₂ as an electronic material.

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Article information

DOI: https://doi.org/10.1039/D2MH01449A
Article type: Communication
Submitted: 23 Nov 2022
Accepted: 20 Feb 2023
First published: 06 Apr 2023
This article is Open Access

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Mater. Horiz., 2023,10, 2254-2261

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Discovery of a metastable van der Waals semiconductor via polymorphic crystallization of an amorphous film

Y. Saito, S. Hatayama, W. H. Chang, N. Okada, T. Irisawa, F. Uesugi, M. Takeguchi, Y. Sutou and P. Fons, Mater. Horiz., 2023, 10, 2254 DOI: 10.1039/D2MH01449A

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

Materials Horizons

Discovery of a metastable van der Waals semiconductor via polymorphic crystallization of an amorphous film†

Abstract

Supplementary files

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Discovery of a metastable van der Waals semiconductor via polymorphic crystallization of an amorphous film

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