Issue 8, 2023

Chloride-assisted synthesis of tellurene directly on SiO2/Si substrates: growth mechanism, thermal properties, and device applications

Abstract

The new single-element two-dimensional materials in the post-graphene era, such as phosphorene and silicene, are emerging as alternative next-generation materials due to their remarkable physical properties. However, the vulnerability of silicene and phosphorene to the air hinders their practical applications. Recently, a new kind of single-element two-dimensional material, namely tellurene, exhibiting outstanding electrical mobility and superior long-term stability in the air, has been successfully synthesized. Here, we report that the addition of chloride (TeCl4) to TeO2 is conducive to the lateral growth of tellurium on the SiO2/Si substrate. The resulting tellurene flakes display outstanding structure stability over 30 days under ambient exposure. Furthermore, the applicability of SThM (scanning thermal microscopy) to investigate the thermal properties of tellurene is presented for the first time, revealing its abnormal thermal conductance across grain boundaries and a thickness-dependent thermal transport behavior. Finally, tellurene-based FETs (field effect transistors) were fabricated, which displayed temperature-dependent Ids that decreased with decreasing temperature rather than metallic transport features, which implies thermal activation of a semiconductor and confirms that the transport follows the 2D variable-range hopping (VRH) model.

Graphical abstract: Chloride-assisted synthesis of tellurene directly on SiO2/Si substrates: growth mechanism, thermal properties, and device applications

Supplementary files

Article information

Article type
Paper
Submitted
18 Jan 2023
Accepted
20 Mar 2023
First published
21 Mar 2023
This article is Open Access
Creative Commons BY-NC license

Mater. Adv., 2023,4, 2008-2016

Chloride-assisted synthesis of tellurene directly on SiO2/Si substrates: growth mechanism, thermal properties, and device applications

Y. Chan, C. Lin, Y. Chou, A. C. Chang, Y. Lin and Y. Chen, Mater. Adv., 2023, 4, 2008 DOI: 10.1039/D3MA00038A

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