Comment on “Regulating the valence level arrangement of high-Al-content AlGaN quantum wells using additional potentials with Mg doping” by W. Lin, J. Kang et al., Phys. Chem. Chem. Phys., 2022, 24, 5529

Abstract

Lu et al. (2022), 24, 5529 uses incorrect explanations for their findings based on an incorrect application of ideas from tight-binding methods. An alternative qualitative explanation based on strain variations and a tight-binding model based on nearest neighbor interactions is provided.