Low-temperature solution-processed LaNiO3 hole-transport layer for UV-stable inverted perovskite solar cells

Xiaxia Cui; Junjun Jin; Zhenkun Zhu; Tonghui Guo; Qiang Tang; Yuan Zhou; Lin Li; Zhen Wang; Guanqi Tang; Qidong Tai

doi:10.1039/D3CC01590D

Low-temperature solution-processed LaNiO₃ hole-transport layer for UV-stable inverted perovskite solar cells†

Xiaxia Cui,^a Junjun Jin,^a Zhenkun Zhu,^a Tonghui Guo,

^a Qiang Tang,^b Yuan Zhou,^a Lin Li,^a Zhen Wang,^a Guanqi Tang*^c and Qidong Tai

*^a

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* Corresponding authors

^a The Institute of Technological Sciences, Wuhan University, Wuhan 430072, P. R. China
E-mail: qdtai@whu.edu.cn

^b School of artificial intelligence, Anhui University of Science and Technology, Huainan, Anhui 232000, China

^c Research Institute of Frontier Science, Southwest Jiaotong University, Chengdu 610500, P. R. China
E-mail: guanqitang13@swjtu.edu.cn

Abstract

We report a solution-processing method to prepare an inorganic LaNiO₃ (LNO) hole-transport layer (HTL) under low temperature (<150 °C) for the first time. The inverted PSCs prepared with LNO exhibit high UV-stability and promising efficiency (17.15%). Our preliminary results show great potential for LNO HTL in the fabrication of efficient and photostable inverted perovskite solar cells (PSCs).

Chemical Communications

Low-temperature solution-processed LaNiO₃ hole-transport layer for UV-stable inverted perovskite solar cells†

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Low-temperature solution-processed LaNiO₃ hole-transport layer for UV-stable inverted perovskite solar cells

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