Issue 41, 2022

In situ preparation of Bi2O2Se/MoO3 thin-film heterojunction array flexible photodetectors

Abstract

Bi2O2Se has broad applications in optoelectronics and electronics because of its excellent air stability and electron mobility. Bi2O2Se is a promising candidate for high-performance infrared (IR) applications. However, very few studies on Bi2O2Se-based IR devices have been reported so far. Here we developed a Bi2O2Se/MoO3 thin-film heterojunction photodetector in the broadband range of 405–1550 nm that exhibits a fast-response time, and ultrahigh specific responsivity (Ri), detectivity (D*), and on/off ratio. The device showed excellent long-term stability (>90 days) without any protective measures under environmental conditions. Furthermore, the prepared Bi2O2Se thin film showed no selectivity for the substrate, making it a promising candidate for preparing CMOS-compatible and flexible devices. The device exhibited great flexibility, and the performance was decreased by only 7.17% after bending by 39% and remained unchanged for 1000 cycles. The device's excellent photoelectric properties suggest that the Bi2O2Se/inorganic heterojunction is a promising way for the fabrication of high-efficiency optoelectronic devices for remote sensing, imaging, and military applications.

Graphical abstract: In situ preparation of Bi2O2Se/MoO3 thin-film heterojunction array flexible photodetectors

Supplementary files

Article information

Article type
Paper
Submitted
09 Jul 2022
Accepted
17 Aug 2022
First published
29 Aug 2022

J. Mater. Chem. C, 2022,10, 15377-15385

In situ preparation of Bi2O2Se/MoO3 thin-film heterojunction array flexible photodetectors

M. Yang, X. Zhang, H. Zhou, G. Fu, X. Zhou, Y. Lian, J. Hao, H. Yu, X. Zhu and J. Wang, J. Mater. Chem. C, 2022, 10, 15377 DOI: 10.1039/D2TC02885A

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