Investigation of nodal line spin-gapless semiconductors using first-principles calculations

Abstract

Nodal line spin-gapless semiconductors (NLSGSs) are a new type of topological spintronic material with a possible high Curie temperature, 100% spin polarization, high carrier mobility, gapless nodal line states at the Fermi level in one spin channel, and spin-polarized drumhead-like surface states. In this review article, we summarize almost all the predicted NLSGSs in two-dimensional (2D) and three-dimensional (3D) materials in the last three years, including the 2D Mn–cyanogen lattice, MnNF, Fe₄N₂, and organic Cr₂N₆C₃ monolayers and 3D NaV₂O₄, Mg₂VO₄, LiV₂O₄, LiV₂F₆, MnF₃, and PdF₃ bulk materials. This review also discusses the unique physical properties and possible applications of these materials. Subsequently, we provide three suggestions for the theoretical design of NLSGSs in the future. Finally, we present the conclusion and a major task for NLSGSs in this review. This review provides an improved understanding of the current state of NLSGSs that have been reported in the last three years and encourages future research on new NLSGSs.