Issue 6, 2022

Emergent solution based IGZO memristor towards neuromorphic applications


Solution-based memristors are emergent devices, due to their potential in electrical performance for neuromorphic computing combined with simple and cheap fabrication processes. However, to achieve practical application in crossbar design tens to hundreds of uniform memristors are required. Regarding this, the production step optimization should be considered as the main objective to achieve high performance devices. In this work, solution-based indium gallium zinc oxide (IGZO) memristor devices are produced using a combustion synthesis process. The performance of the device is optimized by using different annealing temperatures and active layer thicknesses to reach a higher reproducibility and stability. All IGZO memristors show a low operating voltage, good endurance, and retention up to 105 s under air conditions. The optimized devices can be programmed in a multi-level cell operation mode, with 8 different resistive states. Also, preliminary results reveal synaptic behavior by replicating the plasticity of a synaptic junction through potentiation and depression; this is a significant step towards low-cost processes and large-scale compatibility of neuromorphic computing systems.

Graphical abstract: Emergent solution based IGZO memristor towards neuromorphic applications

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Article information

Article type
12 Nov 2021
07 Jan 2022
First published
10 Jan 2022
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2022,10, 1991-1998

Emergent solution based IGZO memristor towards neuromorphic applications

R. A. Martins, E. Carlos, J. Deuermeier, M. E. Pereira, R. Martins, E. Fortunato and A. Kiazadeh, J. Mater. Chem. C, 2022, 10, 1991 DOI: 10.1039/D1TC05465A

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