Volume 239, 2022

GeSe photovoltaics: doping, interfacial layer and devices


Germanium selenide (GeSe) bulk crystals, thin films and solar cells are investigated with a focus on acceptor-doping with silver (Ag) and the use of an Sb2Se3 interfacial layer. The Ag-doping of GeSe occurred by a stoichiometric melt growth technique that created Ag-doped GeSe bulk crystals. A combination of capacitance voltage measurements, synchrotron radiation photoemission spectroscopy and surface space-charge calculations indicates that Ag-doping increases the hole density from 5.2 × 1015 cm−3 to 1.9 × 1016 cm−3. The melt-grown material is used as the source for thermally evaporated GeSe films within solar cells. The cell structure with the highest efficiency of 0.260% is FTO/CdS/Sb2Se3/undoped-GeSe/Au, compared with solar cells without the Sb2Se3 interfacial layer or with the Ag-doped GeSe.

Graphical abstract: GeSe photovoltaics: doping, interfacial layer and devices

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Article type
17 Feb 2022
12 Apr 2022
First published
12 Apr 2022
This article is Open Access
Creative Commons BY license

Faraday Discuss., 2022,239, 250-262

GeSe photovoltaics: doping, interfacial layer and devices

M. J. Smiles, T. P. Shalvey, L. Thomas, T. D. C. Hobson, L. A. H. Jones, L. J. Phillips, C. Don, T. Beesley, P. K. Thakur, T. Lee, K. Durose, J. D. Major and T. D. Veal, Faraday Discuss., 2022, 239, 250 DOI: 10.1039/D2FD00048B

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