Application of Ge2Sb2Te5 phase change films in flexible memory devices

Abstract

The development of high-performance flexible memory materials is of great significance to today's rapidly growing Internet of Things market. In this paper, Ge₂Sb₂Te₅ phase change films were prepared by magnetron sputtering on Si/SiO₂ and flexible polyether-ether-ketone substrates. Their phase change properties were systematically investigated and compared. Their transitions from the amorphous to the crystalline state were compared using an in situ heating method. The effect of different bending radii and the number of bending cycles on the change in resistance was investigated. Changes in the energy band gap at different cycle times were measured by NIR spectrophotometry and changes in the phase structure of the samples after different cycle times were investigated by X-ray diffraction. The surface morphology of the films was observed by atomic force microscopy and scanning electron microscopy after different cycle times. Phase change memory devices based on polyether-ether-ketone substrates were prepared for the Ge₂Sb₂Te₅ materials. The results showed that Ge₂Sb₂Te₅ films based on polyether-ether-ketone substrates have excellent phase transition properties and the potential to become flexible memory devices.