Issue 34, 2022
From the journal:

RSC Advances

Tuning the optical band gap and electrical properties of NiO thin films by nitrogen doping: a joint experimental and theoretical study

Yong Wang,ab   Stéphanie Bruyère,c   Yu Kumagai,d   Naoki Tsunoda,d   Fumiyasu Oba,d   Jaafar Ghanbaja,c   Hui Sun,a   Bo Daib  and  Jean-François Pierson ORCID logo *c  

* Corresponding authors

a School of Space Science and Physics, Shandong University, Weihai 264209, China

b State Key Laboratory of Environmental-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China

c Institut Jean Lamour, UMR 7198-CNRS, Université de Lorraine, Nancy 54011, France
E-mail: jean-francois.pierson@univ-lorraine.fr

d Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, Yokohama 226-8503, Japan

Abstract

A joint experimental and theoretical study is presented to reveal the influence of nitrogen doping on the optical and electrical properties of NiO thin films. Nitrogen addition can significantly enhance the subgap absorption. The molecular state of nitrogen (N2) has been identified in these doped thin films by electron energy loss spectroscopy.

Graphical abstract: Tuning the optical band gap and electrical properties of NiO thin films by nitrogen doping: a joint experimental and theoretical study

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Article information

DOI
https://doi.org/10.1039/D2RA01887J
Article type
Paper
Submitted
23 Mar 2022
Accepted
24 Jul 2022
First published
10 Aug 2022
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2022,12, 21940-21945

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Tuning the optical band gap and electrical properties of NiO thin films by nitrogen doping: a joint experimental and theoretical study

Y. Wang, S. Bruyère, Y. Kumagai, N. Tsunoda, F. Oba, J. Ghanbaja, H. Sun, B. Dai and J. Pierson, RSC Adv., 2022, 12, 21940 DOI: 10.1039/D2RA01887J

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