Issue 30, 2021

Pure and Pr-doped Ce4W9O33 with superior hydroxyl scavenging ability: humidity-independent oxide chemiresistors

Abstract

Water poisoning has been a long-standing problem in oxide semiconductor gas sensors. Herein, for the first time, we report that pure and Pr-doped Ce4W9O33 provide humidity-independent gas sensing characteristics. Ce4W9O33 and Pr-doped Ce4W9O33 powders with a porous structure have been successfully prepared by ultrasonic spray pyrolysis and subsequent annealing at low temperature (600 °C). Interestingly, these p-type oxide semiconductors exhibited nearly the same gas sensing characteristics at 300 °C regardless of humidity variation, whereas pure WO3 showed a significant decrease of sensor resistance and gas response when the atmosphere is changed from dry to relative humidity 80%. Furthermore, Ce4W9O33-based sensors showed highly selective and sensitive detection of ppm-level trimethylamine (TMA). Moisture-endurant gas sensing characteristics were discussed in relation to surface regeneration through the hydroxyl scavenging reaction assisted by abundant Ln3+ (Ln = Ce, Pr) in (Ce1−xPrx)4W9O33 (x = 0–0.3) and TMA selectivity was explained by the acid–base interaction between the analyte gas and sensing material. Phase-pure ternary or quaternary oxides with a decreased oxidation state of lanthanide components provide a new and general strategy to design humidity-independent gas sensors with new functionality.

Graphical abstract: Pure and Pr-doped Ce4W9O33 with superior hydroxyl scavenging ability: humidity-independent oxide chemiresistors

Supplementary files

Article information

Article type
Paper
Submitted
30 Mar 2021
Accepted
01 Jun 2021
First published
02 Jun 2021

J. Mater. Chem. A, 2021,9, 16359-16369

Pure and Pr-doped Ce4W9O33 with superior hydroxyl scavenging ability: humidity-independent oxide chemiresistors

J. Kim, K. B. Kim, H. Li, C. W. Na, K. Lim, Y. K. Moon, J. W. Yoon and J. Lee, J. Mater. Chem. A, 2021, 9, 16359 DOI: 10.1039/D1TA02618F

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