Issue 15, 2021, Issue in Progress

Structural, elastic, and electronic properties of chemically functionalized boron phosphide monolayer

Abstract

Surface functionalization is one of the useful techniques for modulating the mechanical and electronic properties of two-dimensional systems. In the present study, we investigate the structural, elastic, and electronic properties of hexagonal boron phosphide monolayer functionalized by Br and Cl atoms using first-principles predictions. Once surface-functionalized with Br/Cl atoms, the planar structure of BP monolayer is transformed to the low-buckled lattice with the bucking constant of about 0.6 Å for all four configurations of functionalized boron phosphide, i.e., Cl–BP–Cl, Cl–BP–Br, Br–BP–Cl, and Br–BP–Br. The stability of functionalized BP monolayers is confirmed via their phonon spectra analysis and ab initio molecular dynamics simulations. Our calculations indicate that the functionalized BP monolayers possess a fully isotropic elastic characteristic with the perfect circular shape of the angle-dependent Young's modulus and Poisson's ratio due to the hexagonal symmetry. The Cl–BP–Cl is the most stiff with the Young's modulus C2D = 43.234 N m−1. All four configurations of the functionalized boron phosphide are direct semiconductors with a larger band gap than that of a pure BP monolayer. The outstanding stability, isotropic elastic properties, and moderate band gap make functionalized boron phosphide a very intriguing candidate for next-generation nanoelectromechanical devices.

Graphical abstract: Structural, elastic, and electronic properties of chemically functionalized boron phosphide monolayer

Supplementary files

Article information

Article type
Paper
Submitted
22 Jan 2021
Accepted
18 Feb 2021
First published
24 Feb 2021
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2021,11, 8552-8558

Structural, elastic, and electronic properties of chemically functionalized boron phosphide monolayer

T. V. Vu, A. I. Kartamyshev, N. V. Hieu, T. D. H. Dang, S. Nguyen, N. A. Poklonski, C. V. Nguyen, H. V. Phuc and N. N. Hieu, RSC Adv., 2021, 11, 8552 DOI: 10.1039/D1RA00576F

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