Jump to main content
Jump to site search


Crystal engineering and ferroelectricity at the nanoscale in epitaxial 1D manganese oxide on silicon

Author affiliations

Abstract

Ferroelectric oxides have attracted much attention due to their wide range of applications, particularly in electronic devices such as nonvolatile memories and tunnel junctions. As a result, the monolithic integration of these materials into silicon technology and their nanostructuration to develop alternative cost-effective processes are among the central points in the current technology. In this work, we used a chemical route to obtain nanowire thin films of a novel Sr1+δMn8O16 (SMO) hollandite-type manganese oxide on silicon. Scanning transmission electron microscopy combined with crystallographic computing reveals a crystal structure comprising hollandite and pyrolusite units sharing the edges of their MnO6 octahedra, resulting in three types of tunnels arranged along the c axis, where the ordering of the Sr atoms produces natural symmetry breaking. The novel structure gives rise to ferroelectricity and piezoelectricity, as revealed by local direct piezoelectric force microscopy measurements, which confirmed the ferroelectric nature of the SMO nanowire thin films at room temperature and showed a piezoelectric coefficient d33 value of 22 ± 6 pC N−1. Moreover, we proved that flexible vertical SMO nanowires can be harvested providing an electrical output energy through the piezoelectric effect, showing excellent deformability and high interface recombination. This work indicates the possibility of engineering the integration of 1D manganese oxides on silicon, a step which precedes the production of microelectronic devices.

Graphical abstract: Crystal engineering and ferroelectricity at the nanoscale in epitaxial 1D manganese oxide on silicon

Back to tab navigation

Supplementary files

Article information


Submitted
26 Jan 2021
Accepted
13 Apr 2021
First published
13 Apr 2021

Nanoscale, 2021, Advance Article
Article type
Paper

Crystal engineering and ferroelectricity at the nanoscale in epitaxial 1D manganese oxide on silicon

A. Gomez, J. M. Vila-Fungueiriño, C. Jolly, R. Garcia-Bermejo, J. Oró-Solé, E. Ferain, N. Mestres, C. Magén, J. Gazquez, J. Rodriguez-Carvajal and A. Carretero-Genevrier, Nanoscale, 2021, Advance Article , DOI: 10.1039/D1NR00565K

Social activity

Search articles by author

Spotlight

Advertisements