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Issue 5, 2021
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Ionic charge distributions in silicon atomic surface wires

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Abstract

Using a non-contact atomic force microscope (nc-AFM), we examine continuous dangling bond (DB) wire structures patterned on the hydrogen terminated silicon (100)-2 × 1 surface. By probing the DB structures at varying energies, we identify the formation of previously unobserved ionic charge distributions which are correlated to the net charge of DB wires and their predicted degrees of freedom in lattice distortions. Performing spectroscopic analysis, we identify higher energy configurations corresponding to alternative lattice distortions as well as tip-induced charging effects. By varying the length and orientation of these DB structures, we further highlight key features in the formation of these ionic surface phases.

Graphical abstract: Ionic charge distributions in silicon atomic surface wires

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Supplementary files

Article information


Submitted
20 Nov 2020
Accepted
26 Jan 2021
First published
03 Feb 2021

This article is Open Access

Nanoscale, 2021,13, 3237-3245
Article type
Paper

Ionic charge distributions in silicon atomic surface wires

J. Croshaw, T. Huff, M. Rashidi, J. Wood, E. Lloyd, J. Pitters and R. A. Wolkow, Nanoscale, 2021, 13, 3237
DOI: 10.1039/D0NR08295C

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