Comprehensive rear surface passivation of superstrate Sb2Se3 solar cells via post-deposition selenium annealing treatments and the application of an electron blocking layer

Abstract

Sb2Se3, a quasi-1D structured binary chalcogenide, has great potential as a solar cell light absorber owing to its anisotropic carrier transport and benign grain boundaries when the absorber layer is properly aligned along the [hk1] direction perpendicular to the substrate. A growth technique with a high deposition rate, such as vapor transport deposition, is preferred to form an [hk1]-oriented Sb2Se3 film. However, the possible decomposition of Sb2Se3 during cooling after the high-temperature deposition appears to result in Se deficiency, accompanied by the formation of deep-level donor-like defects, such as Se vacancies and Sb on Se antisite defects. Here, we present comprehensive passivation strategies for the rear interface of Sb2Se3 solar cells in a superstrate configuration, namely a post-deposition annealing treatment (PAT) under Se, and the introduction of an electron-blocking layer between Sb2Se3 and the rear metal contact. The PAT effectively passivated the defects associated with Se deficiency and greatly improved the open-circuit voltage and fill factor of Sb2Se3 solar cells. With the further introduction of a poly(N,N-bis(4-butylphenyl)–N,N-bis(phenyl)benzidine) electron-blocking layer, the Sb2Se3 solar cell achieved an efficiency of 7.0%.

Graphical abstract: Comprehensive rear surface passivation of superstrate Sb2Se3 solar cells via post-deposition selenium annealing treatments and the application of an electron blocking layer

Supplementary files

Article information

Article type
Paper
Submitted
19 Aug 2021
Accepted
28 Sep 2021
First published
28 Sep 2021

Faraday Discuss., 2022, Advance Article

Comprehensive rear surface passivation of superstrate Sb2Se3 solar cells via post-deposition selenium annealing treatments and the application of an electron blocking layer

G. Jeong, S. Ji, J. Choi, J. Jung and B. Shin, Faraday Discuss., 2022, Advance Article , DOI: 10.1039/D1FD00056J

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