Issue 17, 2021

Origin of the Ir–Si bond shortening in Ir–NSiN complexes

Abstract

The Ir–Si bond distances reported for Ir-(fac3-NSiNOPy) and Ir-(fac3-NSiN4MeOPy) species (NSiNOPy = bis(pyridine-2-yloxy)methylsilyl and NSiN4MeOPy = bis(4-methyl-pyridine-2-yloxy)methylsily) are in the range of 2.220–2.235 Å. These values are in the lowest limit of the Ir–Si bond distances found in the Cambridge Structural Database (CSD). To understand the origin of such remarkable shortening, a computational study of the bonding situation of representative examples of Ir-(fac3-NSiN) species has been carried out. It is found that the Ir–Si bond can be described as an electron-sharing (i.e. covalent) bond. Despite that, this bond is highly polarized and as a result, the contribution of the electrostatic attractions to the bonding is rather significant. Indeed, there exists a linear relationship (R2 = 0.97) between the Ir–Si bond distance and the extent of the computed electrostatic interactions, which indicates that the ionic contribution to the bonding is mainly responsible for the observed Ir–Si bond shortening.

Graphical abstract: Origin of the Ir–Si bond shortening in Ir–NSiN complexes

Supplementary files

Article information

Article type
Paper
Submitted
11 Feb 2021
Accepted
09 Apr 2021
First published
09 Apr 2021

Dalton Trans., 2021,50, 5951-5959

Origin of the Ir–Si bond shortening in Ir–NSiN complexes

P. García-Orduña, I. Fernández, L. A. Oro and F. J. Fernández-Alvarez, Dalton Trans., 2021, 50, 5951 DOI: 10.1039/D1DT00473E

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