Laser damage mechanism and in situ observation of stacking fault relaxation in a β-Ga2O3 single crystal by the EFG method

Bo Fu; Gaohang He; Wenxiang Mu; Yang Li; Boyuan Feng; Kaihui Zhang; Huanyang Wang; Jin Zhang; Shaojun Zhang; Zhitai Jia; Yujun Shi; Yanbin Li; Sunan Ding; Xutang Tao

doi:10.1039/D1CE00131K

Laser damage mechanism and in situ observation of stacking fault relaxation in a β-Ga₂O₃ single crystal by the EFG method†

Bo Fu,‡^ab Gaohang He,‡^c Wenxiang Mu,*^a Yang Li,^a Boyuan Feng,^c Kaihui Zhang,^d Huanyang Wang,^a Jin Zhang,^a Shaojun Zhang,^a Zhitai Jia,

*^ae Yujun Shi,

^b Yanbin Li,^ef Sunan Ding^c and Xutang Tao

^ag

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* Corresponding authors

^a State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong, China
E-mail: mwx@sdu.edu.cn, z.jia@sdu.edu.cn

^b Department of Chemistry, University of Calgary, Calgary, Alberta T2N 1N4, Canada

^c Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215 123, China

^d School of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China

^e Jiangsu Xiyi Advanced Materials Research Institute of Industrial Technology, Xuzhou, China

^f Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou, China

^g Shenzhen Research Institute of Shandong University, Shenzhen 518 057, China

Abstract

We designed an original and effective method to study the laser damage mechanism of a β-Ga₂O₃ single crystal grown by the edge-defined film-fed growth (EFG) method. Structure destruction under irradiation with a high light field intensity of 1064 nm using an Nd:YAG laser was systematically studied in the β-Ga₂O₃ crystal. Four typical crystal defects, namely, voids, amorphous and nanocrystalline layers and high density stacking faults, were found using a focused ion beam–dual beam scanning electron microscope (FIB-SEM) and a transmission electron microscope (TEM). For the first time, a laser damage mechanism in the β-Ga₂O₃ subsurface layer was built up and illuminated by microstructure analysis. The stacking fault relaxation of the β-Ga₂O₃ single crystal was observed in situ for the first time under electron beam irradiation. The cathodoluminescence (CL) spectrum further revealed the luminescence properties of the stacking faults.

This article is part of the themed collection: Crystal Growth

CrystEngComm

Laser damage mechanism and in situ observation of stacking fault relaxation in a β-Ga₂O₃ single crystal by the EFG method†

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Laser damage mechanism and in situ observation of stacking fault relaxation in a β-Ga₂O₃ single crystal by the EFG method

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