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Issue 11, 2021
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Growth mechanism of helical γ-Dy2S3 single crystals

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Abstract

Unusual helical single crystals of γ-Dy2S3 were grown from solution by SnS evaporation, and their growth mechanism was investigated. The helical growth of γ-Dy2S3 single crystals is driven by axial screw dislocations, and the crystals grow via the vapor–solid–solid mechanism in the presence of a three-phase interface. Dy2S3 transfers into the vapor phase through a nonequilibrium process owing to simultaneous evaporation of Dy2S3 and SnS. The capture of a nonvolatile component during evaporation is common for solutions comprising volatile and nonvolatile components.

Graphical abstract: Growth mechanism of helical γ-Dy2S3 single crystals

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Article information


Submitted
02 Dec 2020
Accepted
23 Jan 2021
First published
25 Jan 2021

CrystEngComm, 2021,23, 2196-2201
Article type
Communication

Growth mechanism of helical γ-Dy2S3 single crystals

R. E. Nikolaev, V. S. Sulyaeva, A. V. Alekseev, A. S. Sukhikh, E. V. Polyakova, T. A. Pomelova, T. Kuzuya, S. Hirai and B. Tran Nhu, CrystEngComm, 2021, 23, 2196
DOI: 10.1039/D0CE01750G

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