Jump to main content
Jump to site search

Issue 11, 2021
Previous Article Next Article

Growth mechanism of helical γ-Dy2S3 single crystals

Author affiliations


Unusual helical single crystals of γ-Dy2S3 were grown from solution by SnS evaporation, and their growth mechanism was investigated. The helical growth of γ-Dy2S3 single crystals is driven by axial screw dislocations, and the crystals grow via the vapor–solid–solid mechanism in the presence of a three-phase interface. Dy2S3 transfers into the vapor phase through a nonequilibrium process owing to simultaneous evaporation of Dy2S3 and SnS. The capture of a nonvolatile component during evaporation is common for solutions comprising volatile and nonvolatile components.

Graphical abstract: Growth mechanism of helical γ-Dy2S3 single crystals

Back to tab navigation

Supplementary files

Article information

02 Dec 2020
23 Jan 2021
First published
25 Jan 2021

CrystEngComm, 2021,23, 2196-2201
Article type

Growth mechanism of helical γ-Dy2S3 single crystals

R. E. Nikolaev, V. S. Sulyaeva, A. V. Alekseev, A. S. Sukhikh, E. V. Polyakova, T. A. Pomelova, T. Kuzuya, S. Hirai and B. Tran Nhu, CrystEngComm, 2021, 23, 2196
DOI: 10.1039/D0CE01750G

Social activity

Search articles by author