Issue 47, 2021
From the journal:

CrystEngComm

Halogen bonding vs. π-stacking interactions in new bis(acenaphthylene)dione semiconductors†

Ying-Hsuan Liu, ORCID logo a   Afshin Dadvand,a   Hatem M. Titi, ORCID logo a   Ehsan Hamzehpoor ORCID logo a  and  Dmitrii F. Perepichka ORCID logo *a  

* Corresponding authors

a Department of Chemistry, McGill University, Montreal, Quebec H3A 0B8, Canada
E-mail: dmitrii.perepichka@mcgill.ca

Abstract

We report a series of new halogenated bis(acenaphthylene)dione (BAN) derivatives and study the effect of their solid-state organization on optoelectronic properties and electron transport measured in n-type organic field-effect transistors (OFETs).

Graphical abstract: Halogen bonding vs. π-stacking interactions in new bis(acenaphthylene)dione semiconductors

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Article information

DOI
https://doi.org/10.1039/D1CE01047F
Article type
Communication
Submitted
08 Aug 2021
Accepted
27 Sep 2021
First published
11 Oct 2021

CrystEngComm, 2021,23, 8255-8259

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Halogen bonding vs. π-stacking interactions in new bis(acenaphthylene)dione semiconductors

Y. Liu, A. Dadvand, H. M. Titi, E. Hamzehpoor and D. F. Perepichka, CrystEngComm, 2021, 23, 8255 DOI: 10.1039/D1CE01047F

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