Jump to main content
Jump to site search

Issue 2, 2021
Previous Article Next Article

Long catalyst-free InAs nanowires grown on silicon by HVPE

Author affiliations


We report for the first time on the hydride vapor phase epitaxy (HVPE) growth of long (26 μm) InAs nanowires on Si(111) substrate grown at a standard rate of 50 μm h−1. The nanowires grow vertically along the (111)B direction and exhibit a well faceted hexagonal shape with a constant diameter. The effect of the experimental parameters, growth temperature and III/V ratio, is investigated. The thermodynamic and kinetic mechanisms involved during the growth of such long nanowires are identified. It is demonstrated that growth occurs through direct condensation of InCl and As4/As2 gaseous species. Dechlorination of adsorbed InCl molecules is the limiting step at low temperature. Structural analysis through high resolution transmission electron microscopy (HRTEM) and high-angle annular dark-field (HAADF) imaging was performed. The high As4 partial pressure of the HVPE environment induces the presence of both wurtzite and zinc-blende phases. The results emphasize the potential of the low cost HVPE technique for the monolithic integration of arrays of long InAs nanowires on silicon.

Graphical abstract: Long catalyst-free InAs nanowires grown on silicon by HVPE

Back to tab navigation

Supplementary files

Article information

22 Sep 2020
24 Nov 2020
First published
27 Nov 2020

CrystEngComm, 2021,23, 378-384
Article type

Long catalyst-free InAs nanowires grown on silicon by HVPE

G. Grégoire, E. Gil, M. Zeghouane, C. Bougerol, H. Hijazi, D. Castelluci, V. G. Dubrovskii, A. Trassoudaine, N. I. Goktas, R. R. LaPierre and Y. André, CrystEngComm, 2021, 23, 378
DOI: 10.1039/D0CE01385D

Social activity

Search articles by author