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Voltage-triggered insulator-to-metal transition of ALD NbOx thin films for a two-terminal threshold switch

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Abstract

We report two-terminal threshold devices that use niobium oxide (NbOx) thin films that were synthesized using atomic layer deposition (ALD) then pulsed-laser annealing. The ALD growth conditions for NbOx thin films were optimized using niobium(V) ethoxide and deionized water at 170 °C. As-deposited NbOx films were amorphous with Nb5+ valence state, but laser annealing led to partial conversion to NbO2 crystallites with Nb4+ valence states. This two-terminal device with ALD-NbOx exhibits excellent threshold switching with low off current ∼847 nA at 1 V, high on/off current ratio (∼103), high reliability, fast switching time (<20 ns) and high modulation frequency (>1 MHz).

Graphical abstract: Voltage-triggered insulator-to-metal transition of ALD NbOx thin films for a two-terminal threshold switch

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Article information


Submitted
31 Aug 2020
Accepted
10 Oct 2020
First published
13 Oct 2020

J. Mater. Chem. C, 2020, Advance Article
Article type
Communication

Voltage-triggered insulator-to-metal transition of ALD NbOx thin films for a two-terminal threshold switch

N. Park, Y. T. Kim, Y. Park, J. Y. Cho, S. S. Oh, J. Heo and J. Son, J. Mater. Chem. C, 2020, Advance Article , DOI: 10.1039/D0TC04137H

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