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Enhancing the performance of all vapor-deposited electron-conductor-free CsPbBr3 photodetectors via interface engineering for their applications in image sensing

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Abstract

CsPbBr3 photodetectors (PDs) are attracting tremendous attention for their superior properties, such as ultrafast light response and high chemical stability. However, the widely-used spin-coating technique involved in the preparation process of CsPbBr3 PDs restricts the construction of large-scale PD arrays, making it challenging for their applications in high-resolution image sensing. Here, we demonstrate fully vapor-deposited CsPbBr3 PDs with all the functional layers deposited through an evaporation route. The employment of an inexpensive copper(II) phthalocyanine (CuPc) hole conductor and the abandonment of the electron conductor can significantly decrease the whole production costs. An ultrathin MoO3 buffer layer is further introduced to passivate the defect densities of the CsPbBr3 perovskite and tailor the band alignment of the whole device. The reduced interface energy barrier and non-radiative recombination loss of the MoO3-modified devices are revealed by both experimental characterization and theoretical density functional theory (DFT) analysis. The best-performing MoO3-modified CsPbBr3 PD achieves an ultrafast response time of 0.96 μs, an ultrahigh on/off ratio of 1.17 × 106 and a detectivity of 5.22 × 1012 Jones at 0 V bias voltage. This performance is one of the best among all the self-powered electron/hole-conductor-free perovskite PDs. A large-area (57.8 cm2) image sensor comprising 25 × 25 CsPbBr3 PD arrays is further fabricated. Owing to the intrinsic advantages of the evaporation technique in depositing large-area and uniform films, the as-designed 625-pixel sensor exhibits a salient imaging capability. Our work opens up new avenues for the mass production of cost-effective, large-area and high-performing CsPbBr3 PD arrays for applications in image sensing.

Graphical abstract: Enhancing the performance of all vapor-deposited electron-conductor-free CsPbBr3 photodetectors via interface engineering for their applications in image sensing

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Article information


Submitted
25 Aug 2020
Accepted
21 Sep 2020
First published
23 Sep 2020

J. Mater. Chem. C, 2020, Advance Article
Article type
Paper

Enhancing the performance of all vapor-deposited electron-conductor-free CsPbBr3 photodetectors via interface engineering for their applications in image sensing

X. Liu, X. Tan, Z. Liu, X. Zhang, T. Shi and G. Liao, J. Mater. Chem. C, 2020, Advance Article , DOI: 10.1039/D0TC04027D

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