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Issue 40, 2020
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Role of interfacial 2D graphene in high performance 3D graphene/germanium Schottky junction humidity sensors

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Abstract

Three-dimensional graphene (3D-Gr) is an attractive nominee for humidity sensing due to its considerable specific surface area and excellent thermal properties. Nevertheless, in the current method of preparing 3D-Gr, amorphous carbon layers are added as an interfacial layer, which will reduce the thermal/electrical property of 3D-Gr-based devices. Herein, by employing two-dimensional graphene (2D-Gr) as an interfacial layer in plasma-assisted chemical vapor deposition (PACVD), in situ synthesis of 3D-Gr on a Ge substrate can improve its performance when used as a humidity sensor. The resulting 3D/2D-Gr/Ge hybrid architecture has excellent Schottky junction-based humidity sensing characteristics with the fastest response rate and recovery time at room temperature because of its enhanced thermal/electrical conductivity without multiple post-transfer processing steps being required during device fabrication. Furthermore, Joule heating dismisses physically adsorbed vapour molecules from the 3D/2D-Gr hybrid architecture, thus realizing the completely reversible operation thereof. The mechanism of humidity detection was explored by experiments and confirmed by scanning Kelvin probe microscopy (SKPM) and finite-difference time-domain (FDTD) simulation. The rational design of hybrid architecture with 2D-Gr has proven to be advantageous for developing the humidity sensing performances of the device.

Graphical abstract: Role of interfacial 2D graphene in high performance 3D graphene/germanium Schottky junction humidity sensors

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Supplementary files

Article information


Submitted
13 Aug 2020
Accepted
09 Sep 2020
First published
11 Sep 2020

J. Mater. Chem. C, 2020,8, 14196-14202
Article type
Paper

Role of interfacial 2D graphene in high performance 3D graphene/germanium Schottky junction humidity sensors

M. Zhao, W. Zhu, X. Feng, S. Yang, Z. Liu, S. Tang, D. Chen, Q. Guo, G. Wang and G. Ding, J. Mater. Chem. C, 2020, 8, 14196
DOI: 10.1039/D0TC03853A

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