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Enhanced hydrolytic and electrical stability of eco-friendly processed polyimide gate dielectrics for organic transistors

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Abstract

Here, eco-friendly, low-temperature solution-processed polyimide (PI) thin films with high hydrolytic stability under ambient air have been successfully developed for gate dielectric layers in organic field-effect transistors (OFETs). Poly(amic acid) (PAA), a precursor of PI based on 3,3′,4,4′-biphenyltetracarboxylic dianhydride (BPDA) and p-phenylenediamine (pPDA) with 1,2-dimethylimidazole, is synthesized through a one-step polymerization reaction in deionized water as a solvent. The incorporation of 1,2-dimethylimidazole allows the formation of the ammonium salt of PAA (PAAS), which exhibits a significant enhancement in hydrolytic stability and solubility in deionized water. The chemical structure and material properties of PAAS polymerized in deionized water (W-PAAS) are investigated to determine the effect of the solvent on the polymerization compared to those of PAA polymerized in organic solvent (O-PAA). The hydrolytic stability of O-PAA and W-PAAS is explored by identifying the surface morphology of O-PI and W-PI thin films prepared in inert, ambient, and humid air. W-PI thin films provide more reliable surface properties and superior electrical performances compared to O-PI thin films. In particular, owing to the excellent hydrolytic stability of W-PAAS, OFETs with W-PI gate dielectrics have a yield of 100% at low temperature below 250 °C, regardless of the processing environment.

Graphical abstract: Enhanced hydrolytic and electrical stability of eco-friendly processed polyimide gate dielectrics for organic transistors

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Supplementary files

Article information


Submitted
15 Jul 2020
Accepted
06 Aug 2020
First published
07 Aug 2020

J. Mater. Chem. C, 2020, Advance Article
Article type
Paper

Enhanced hydrolytic and electrical stability of eco-friendly processed polyimide gate dielectrics for organic transistors

Y. Jeong, H. Park, Y. So, H. J. Mun, T. J. Shin, N. K. Park, J. Kim, S. Yoo, J. C. Won and Y. H. Kim, J. Mater. Chem. C, 2020, Advance Article , DOI: 10.1039/D0TC03341C

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