Issue 43, 2020
From the journal:

Journal of Materials Chemistry C

Selection of the two enantiotropic polymorphs of diF-TES-ADT in solution sheared thin film transistors†

Tommaso Salzillo, ORCID logo ‡ab   Nieves Montes,‡a   Raphael Pfattnera  and  Marta Mas-Torrent ORCID logo *a  

* Corresponding authors

a Department of Molecular Nanoscience and Organic Materials, Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, Spain
E-mail: mmas@icmab.es

b Universitat Autònoma de Barcelona, Bellaterra (Cerdanyola del Vallès), Spain

Abstract

We report the effect of solution shearing speed on the performances of diF-TES-ADT-based OFETs. X-ray diffraction reveals that the low-temperature phase is predominant at low shearing speed, while, upon increasing the speed, the high-tempertature phase prevails. The effect of polymorph composition on the electrical performances is reported with the best mobilities found in a mixture of the two polymorphs.

Graphical abstract: Selection of the two enantiotropic polymorphs of diF-TES-ADT in solution sheared thin film transistors

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Article information

DOI
https://doi.org/10.1039/D0TC03222K
Article type
Paper
Submitted
07 Jul 2020
Accepted
28 Aug 2020
First published
04 Sep 2020
This article is Open Access
Creative Commons BY-NC license

J. Mater. Chem. C, 2020,8, 15361-15367

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Selection of the two enantiotropic polymorphs of diF-TES-ADT in solution sheared thin film transistors

T. Salzillo, N. Montes, R. Pfattner and M. Mas-Torrent, J. Mater. Chem. C, 2020, 8, 15361 DOI: 10.1039/D0TC03222K

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