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Selection of the two enantiotropic polymorphs of diF-TES-ADT in solution sheared thin film transistors

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Abstract

We report the effect of solution shearing speed on the performances of diF-TES-ADT-based OFETs. X-ray diffraction reveals that the low-temperature phase is predominant at low shearing speed, while, upon increasing the speed, the high-tempertature phase prevails. The effect of polymorph composition on the electrical performances is reported with the best mobilities found in a mixture of the two polymorphs.

Graphical abstract: Selection of the two enantiotropic polymorphs of diF-TES-ADT in solution sheared thin film transistors

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Article information


Submitted
07 Jul 2020
Accepted
28 Aug 2020
First published
04 Sep 2020

This article is Open Access

J. Mater. Chem. C, 2020, Advance Article
Article type
Paper

Selection of the two enantiotropic polymorphs of diF-TES-ADT in solution sheared thin film transistors

T. Salzillo, N. Montes, R. Pfattner and M. Mas-Torrent, J. Mater. Chem. C, 2020, Advance Article , DOI: 10.1039/D0TC03222K

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