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Issue 40, 2020
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Experimental evidence of wide bandgap in triclinic (001)-oriented Sn5O2(PO4)2 thin films on Y2O3 buffered glass substrates

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Abstract

Sn5O2(PO4)2 is a promising p-type transparent semiconducting oxide. Phase-pure triclinic Sn5O2(PO4)2 thin films were grown by pulsed laser deposition using a Sn2(P2O7) target with higher phosphorus content. The (001)-oriented growth of triclinic Sn5O2(PO4)2 on glass was achieved by means of a (111)-textured Y2O3 buffer layer. STEM-EDX and XPS revealed that the composition of the obtained film is near-stoichiometric, thus indicating a suitable semiconducting material. The bandgap of the triclinic Sn5O2(PO4)2 film was estimated to be as large as 3.87 eV, which is the first experimental evidence verifying a recent theoretical prediction by Q. Xu et al., Chem. Mater., 2017, 29, 2459 quite closely.

Graphical abstract: Experimental evidence of wide bandgap in triclinic (001)-oriented Sn5O2(PO4)2 thin films on Y2O3 buffered glass substrates

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Article information


Submitted
07 Jul 2020
Accepted
23 Sep 2020
First published
24 Sep 2020

J. Mater. Chem. C, 2020,8, 14203-14207
Article type
Paper

Experimental evidence of wide bandgap in triclinic (001)-oriented Sn5O2(PO4)2 thin films on Y2O3 buffered glass substrates

M. Fukumoto, C. Yang, W. Yu, C. Patzig, T. Höche, T. Ruf, R. Denecke, M. Lorenz and M. Grundmann, J. Mater. Chem. C, 2020, 8, 14203
DOI: 10.1039/D0TC03213A

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